Courses:

Integrated Microelectronic Devices >> Content Detail



Syllabus



Syllabus

A list of topics covered in the course is available in the calendar.



Description


6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined.



Prerequisite


The prerequisites for this course are 6.012 Microelectronic Devices and Circuits or 3.42 Electronic Materials Design or equivalent.



Level


H-level graduate subject, 12 units, 2 engineering design points.



Assignments


There will be 9 homeworks, 3 device characterization projects (PN diode, MOSFET, BJT), and one device design project. See the calendar for information on due dates.



Exams


There will be two quizzes and one final exam. Quiz 1 will cover Ses #L1-L12 and will take place one day after Ses #L16. Quiz 2 will cover Ses #L13-L24 and will take place one day after Ses #L25.

The final exam will cover all material but will emphasize Ses #L25-L39. It will take place during final exam week. The time and location will be decided by the Registrar. All exams are open book and a calculator is required.



Grading



ACTIVITIESPERCENTAGES
Homework15%
Device characterization projects10%
Design project10%
Quiz 120%
Quiz 220%
Final exam25%



Collaboration Policy


In all take-home exercises of this subject (homework, device characterization projects, design project) you may collaborate with another student in this class. In fact, collaboration is encouraged. However, these are not group projects to be divided among several participants. Every individual must carry out every exercise in its entirety. Every one of the items of each exercise contains a substantial educational experience. If you collaborate with another student in any exercise, please prominently show in your solutions the name of your collaborator. Violations of this policy will be handled by MIT's Committee on Discipline. If you have questions regarding this policy, please ask the instructor.



Late Assignment Policy


Assignments are due at lecture on the designated date. Late homework is acceptable at the following lecture session after it is due (50% of credit only). No credit for homework later than this. Special cases can only be handled by lecturer.



Recommended Citation


For any use or distribution of these materials, please cite as follows:

Jesús del Alamo and Harry Tuller, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].



Calendar


The calendar below provides information on the course's lecture (L) and recitation (R) sessions.


SES #TOPICSKEY DATES
L16.720 overview; fundamental conceptsProject 1 out
L2Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS)
L3Carrier statistics in semiconductors; Fermi level
L4Generation and recombination mechanisms; equilibrium rates
L5Generation and recombination rates outside equilibrium

Project 1 due

Homework 1 out

R1Problems on carrier statistics in equilibrium, generation and recombination
L6Carrier dynamics; thermal motion
L7Drift; diffusion; transit time
L8Non-uniform doping distribution

Homework 1 due

Homework 2 out

R2Problems on carrier dynamics, drift and diffusion
L9Quasi-Fermi levels; continuity equations
R3Problems on non-uniform doping distribution, quasi-Fermi levels
L10Shockley equations; majority-carrier type situations

Homework 2 due

Homework 3 out

L11Minority-carrier type situations: statics
L12Minority-carrier dynamics; space-charge and high-resistivity (SCR) transport; carrier multiplication
R4Problems on majority carrier situations, minority carrier situations: statics and dynamics
L13PN junction: electrostatics in and out of equilibriumHomework 3 due
L14PN junction: depletion capacitance; current-voltage (I-V) characteristics
L15PN junction: carrier storage; diffusion capacitance; PN diode: parasitics
L16PN junction dynamics; PN diode: non-ideal and second-order effectsQuiz 1 taken 1 day after Ses #L16
L17Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics

Project 2 out

Homework 4 out

R5Problems on metal-semiconductor junction, Schottky diode
L18Metal semiconductor junction I-V characteristics
L19Schottky diode; equivalent-circuit model; ohmic contacts
L20Ideal semiconductor surface

Homework 4 due

Homework 5 out

R6Problems on PN junction, PN diode
L21Metal-oxide-semiconductor (MOS) in equilibrium
L22MOS outside equilibrium; Poisson-Boltzmann formulation
L23Simplifications to Poisson-Boltzmann formulation

Homework 5 due

Project 2 due

R7Problems on MOS structure
L24Dynamics of MOS structure: C-V characteristics; three-terminal MOS
L25Inversion layer transportQuiz 2 taken 1 day after Ses #L25
L26Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics

Project 3 out

Homework 6 out

L27I-V characteristics (cont.): body effect, back bias
L28I-V characteristics (cont.): channel-length modulation, subthreshold regime

Homework 6 due

Homework 7 out

R8Problems on long MOSFET
L29C-V characteristics; small-signal equivalent circuit models
L30Short-channel MOSFET: short-channel effects
L31MOSFET short-channel effects (cont.)

Homework 7 due

Homework 8 out

R9Problems on short MOSFET
L32MOSFET scaling

Project 4 out

Project 3 due

L33Evolution of MOSFET design
L34Bipolar junction transistor (BJT) intro; basic operation

Homework 8 due

Homework 9 out

R10Problems on short MOSFET
L35BJT I-V characteristics in forward-active
L36Other regimes of operation of BJT
L37BJT C-V characteristics; small-signal equivalent circuit modelsHomework 9 due
L38BJT high-frequency characteristicsProject 4 due
R11Harry's guest lecture
R12Problems on BJT
L39BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS)

 








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