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Integrated Microelectronic Devices >> Content Detail



Study Materials



Readings

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Textbooks




Required


del Alamo, Jesús A. Integrated Microelectronic Devices: Physics and Modeling. (In preparation.) To be distributed in lecture.



Reference Texts


Amazon Muller, Richard S., Theodore I. Kamins, and Mansun Chan. Device Electronics for Integrated Circuits. 3rd ed. New York, NY: John Wiley & Sons, 2002. ISBN: 9780471593980.

Amazon Pierret, Robert F. Semiconductor Device Fundamentals. Reading, MA: Addison Wesley, 1996. ISBN: 9780201543933.

Amazon Streetman, Ben G. Solid State Electronics Devices. 4th ed. Upper Saddle River, NJ: Prentice Hall, 1995. ISBN: 9780131587670.



Other Useful Books


Amazon McKelvey, John P. Solid State and Semiconductor Physics. Melbourne, FL: Krieger Pub Co, 1982. ISBN: 9780898743968.

Amazon Tsividis, Yannis P. Operation and Modeling of the MOS Transistor. 2nd ed. New York, NY: McGraw-Hill, 1987. ISBN: 9780070653818.



Readings by Session


The course readings are taken from the required textbook by Prof. Jesús del Alamo.


SES #TOPICSREADINGS
L16.720 overview; fundamental conceptsChapter 1
L2Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS)Chapter 2, sections 2.1-2.4 (2.4.1)
L3Carrier statistics in semiconductors; Fermi levelChapter 2, sections 2.4-2.6
L4Generation and recombination mechanisms; equilibrium ratesChapter 3, sections 3.1-3.4
L5Generation and recombination rates outside equilibriumChapter 3, sections 3.4-3.7
L6Carrier dynamics; thermal motionChapter 4, sections 4.1-4.3
L7Drift; diffusion; transit timeChapter 4, section 4.5
L8Non-uniform doping distributionChapter 4, section 4.6; Chapter 5, sections 5.1 and 5.2
L9Quasi-Fermi levels; continuity equationsChapter 5, sections 5.3-5.5
L10Shockley equations; majority-carrier type situationsChapter 5, section 5.6
L11Minority-carrier type situations: staticsChapter 5, section 5.4
L12Minority-carrier dynamics; space-charge and high-resistivity (SCR) transport; carrier multiplicationChapter 5, section 5.7
L13PN junction: electrostatics in and out of equilibriumChapter 7, sections 7.1 and 7.2 (7.2.1, 7.2.2)
L14PN junction: depletion capacitance; current-voltage (I-V) characteristicsChapter 7, section 7.2 (7.2.3)
L15PN junction: carrier storage; diffusion capacitance; PN diode: parasiticsChapter 6, sections 6.2 (6.2.4) and 6.3
L16PN junction dynamics; PN diode: non-ideal and second-order effectsChapter 6, section 6.4
L17Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristicsChapter 7, sections 7.1 and 7.2
L18Metal semiconductor junction I-V characteristicsChapter 7, section 7.2.3
L19Schottky diode; equivalent-circuit model; ohmic contactsChapter 7, sections 7.3-7.5
L20Ideal semiconductor surfaceChapter 8, sections 8.1-8.2 (8.2.1-8.2.2)
L21Metal-oxide-semiconductor (MOS) in equilibriumChapter 8, sections 8.2 (8.2.3, 8.2.4) and 8.3 (8.3.1)
L22MOS outside equilibrium; Poisson-Boltzmann formulationChapter 8, section 8.3 (8.3.2-8.3.4)
L23Simplifications to Poisson-Boltzmann formulationChapter 8, sections 8.3 (8.3.5) and 8.4 (8.4.1, 8.4.2)
L24Dynamics of MOS structure: C-V characteristics; three-terminal MOSChapter 8, sections 8.5-8.6; Chapter 9, section 9.1
L25Inversion layer transportChapter 9, sections 9.2-9.4 (9.4.1, 9.4.2)
L26Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristicsChapter 9, sections 9.4 (9.4.3-9.4.5) and 9.5
L27I-V characteristics (cont.): body effect, back biasChapter 9, sections 9.5 (9.5.2) and 9.6
L28I-V characteristics (cont.): channel-length modulation, sub threshold regimeChapter 9, section 9.7
L29C-V characteristics; small-signal equivalent circuit modelsChapter 9, sections 9.7.3 and 9.7.4
L30Short-channel MOSFET: short-channel effectsKo, P. K. "Approaches to Scaling."
L31MOSFET short-channel effects (cont.)Ko, P. K. "Approaches to Scaling."
L32MOSFET scalingKo, P. K. "Approaches to Scaling."
L33Evolution of MOSFET design
L34Bipolar junction transistor (BJT) intro; basic operationChapter 11, sections 11.1 and 11.2 (11.2.1)
L35BJT I-V characteristics in forward-activeChapter 11, section 11.2 (11.2.1)
L36Other regimes of operation of BJTChapter 11, sections 11.2 (11.2.5), 11.3, and 11.4 (11.4.1)
L37BJT C-V characteristics; small-signal equivalent circuit modelsChapter 11, section 11.4.2
L38BJT high-frequency characteristicsChapter 11, section 11.5 (11.5.1, 11.5.3, 11.5.4, 11.5.5 but only qualitatively)
L39BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS)

 








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